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| HGTG30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49172. Packaging JEDEC STYLE TO-247 E C G Symbol C Ordering Information PART NUMBER HGTG30N60B3D PACKAGE TO-247 BRAND G30N60B3D G E NOTE: When ordering, use the entire part number. Features * 60A, 600V, TC = 25oC * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Hyperfast Anti-Parallel Diode FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 (c)2004 Fairchild Semiconductor Corporation HGTG30N60B3D Rev. B2 HGTG30N60B3D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG30N60B3D Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC(AVG) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 60 30 25 220 20 30 60A at 600V 208 1.67 -55 to 150 260 4 10 W W/oC oC oC UNITS V A A A A V V 600 s s CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 3. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 4.2 VCE (PK) = 480V VCE (PK) = 600V 200 60 TYP 1.45 1.7 5 7.2 170 230 36 25 137 58 550 680 MAX 250 3 1.9 2.1 6 250 190 250 800 900 UNITS V A mA V V V nA A A V nC nC ns ns ns ns J J Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110 , VGE = 15V IC = 250A, VCE = VGE VGE = 20V TJ = 150oC, RG = 3, VGE = 15V, L = 100H Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA VGE(TH) IGES SSOA Gate to Emitter Plateau Voltage On-State Gate Charge VGEP QG(ON) IC = IC110, VCE = 0.5 BVCES IC = IC110 , VCE = 0.5 BVCES VGE = 15V VGE = 20V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) td(ON)I trI td(OFF)I tfI EON EOFF IGBT and Diode at TJ = 25oC, ICE = IC110 , VCE = 0.8 BVCES , VGE = 15V, RG = 3, L = 1mH, Test Circuit (Figure 19) (c)2004 Fairchild Semiconductor Corporation HGTG30N60B3D Rev. B2 HGTG30N60B3D Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON EOFF VEC trr IEC = 30A IEC = 1A, dIEC/dt = 200A/s IEC = 30A, dIEC/dt = 200A/s Thermal Resistance Junction To Case RJC IGBT Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TEST CONDITIONS IGBT and Diode at TJ = 150oC, ICE = IC110 , VCE = 0.8 BVCES , VGE = 15V, RG = 3, L = 1mH, Test Circuit (Figure 19) MIN TYP 32 24 275 90 1300 1600 1.95 32 45 MAX 320 150 1550 1900 2.5 40 55 0.6 1.3 UNITS ns ns ns ns J J V ns ns oC/W oC/W Typical Performance Curves 60 ICE , DC COLLECTOR CURRENT (A) 50 40 30 20 10 0 25 Unless Otherwise Specified 225 200 175 150 125 100 75 50 25 0 0 100 200 300 400 500 600 700 VCE , COLLECTOR TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 15V TJ = 150oC, RG = 3, VGE = 15V, L = 100H 50 75 100 125 150 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA (c)2004 Fairchild Semiconductor Corporation HGTG30N60B3D Rev. B2 HGTG30N60B3D Typical Performance Curves fMAX, OPERATING FREQUENCY (kHz) 100 Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (s) ISC , PEAK SHORT CIRCUIT CURRENT (A) 7 60 20 18 16 ISC 14 12 10 8 6 10 11 12 13 14 15 VGE , GATE TO EMITTER VOLTAGE (V) 350 300 250 200 150 500 450 400 TJ = 150oC, RG = 3, L = 1mH, V CE = 480V VCE = 360V, RG = 3, TJ = 125oC 10 TC f = 0.05 / (td(OFF)I + td(ON)I) 1 MAX1 75oC fMAX2 = (PD - PC) / (EON + EOFF) 75oC PC = CONDUCTION DISSIPATION 110oC (DUTY FACTOR = 50%) 110oC RJC = 0.6oC/W, SEE NOTES 0.1 20 5 10 VGE 15V 10V 15V 10V 40 60 tSC ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ICE , COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 225 DUTY CYCLE <0.5%, VGE = 10V 200 PULSE DURATION = 250s 175 150 125 100 75 50 25 0 0 2 4 6 8 10 TC = 25oC TC = -55oC TC = 150oC 350 300 250 200 150 100 DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250s TC = -55oC TC = 150oC TC = 25oC 50 0 0 1 2 3 4 5 6 VCE , COLLECTOR TO EMITTER VOLTAGE (V) VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 6 EON , TURN-ON ENERGY LOSS (mJ) 5 EOFF, TURN-OFF ENERGY LOSS (mJ) RG = 3, L = 1mH, VCE = 480V TJ = 25oC, TJ = 150oC, VGE = 10V 4.5 RG = 3, L = 1mH, VCE = 480V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10 20 30 TJ = 25oC, VGE = 10V OR 15V 40 50 TJ = 150oC, VGE = 10V OR 15V 4 3 2 1 0 10 TJ = 25oC, TJ = 150oC, VGE = 15V 20 30 40 50 60 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT (c)2004 Fairchild Semiconductor Corporation HGTG30N60B3D Rev. B2 HGTG30N60B3D Typical Performance Curves 55 RG = 3, L = 1mH, VCE = 480V tdI , TURN-ON DELAY TIME (ns) 50 trI , RISE TIME (ns) 45 40 35 30 TJ = 25oC, TJ = 150oC, VGE = 15V 25 10 20 30 40 50 60 TJ = 25oC, TJ = 150oC, VGE = 10V 200 TJ = 25oC, TJ = 150oC, VGE = 15V 150 Unless Otherwise Specified (Continued) 250 RG = 3, L = 1mH, VCE = 480V TJ = 25oC, TJ = 150oC, VGE = 10V 100 50 0 10 20 30 40 50 60 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 300 td(OFF)I , TURN-OFF DELAY TIME (ns) RG = 3, L = 1mH, VCE = 480V tfI , FALL TIME (ns) 120 RG = 3, L = 1mH, VCE = 480V 250 TJ = 150oC, VGE = 10V, VGE = 15V TJ = 25oC, VGE = 10V, VGE = 15V 200 100 TJ = 150oC, VGE = 10V AND 15V 80 150 60 TJ = 25oC, VGE = 10V AND 15V 100 10 20 30 40 50 60 40 10 20 30 40 50 60 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) 250 200 150 100 50 0 DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250s TC = -55oC VGE, GATE TO EMITTER VOLTAGE (V) 300 16 14 12 Ig (REF) = 1mA, RL = 10, TC = 25oC VCE = 600V 10 8 6 VCE = 200V 4 VCE = 400V 2 0 0 50 100 QG, GATE CHARGE (nC) 150 200 TC = 25oC TC = 150oC 4 5 6 7 8 9 10 11 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS (c)2004 Fairchild Semiconductor Corporation HGTG30N60B3D Rev. B2 HGTG30N60B3D Typical Performance Curves 10 FREQUENCY = 1MHz 8 CIES Unless Otherwise Specified (Continued) C, CAPACITANCE (nF) 6 4 COES CRES 0 0 5 10 15 20 25 2 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ZJC , NORMALIZED THERMAL RESPONSE 100 0.50 0.20 10-1 0.10 0.05 0.02 0.01 10-2 10-5 DUTY FACTOR, D = t1 / t2 SINGLE PULSE 10-4 10-3 10-2 PEAK TJ = (PD X ZJC X RJC) + TC 10-1 100 PD t2 101 t1 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE 200 IEC , FORWARD CURRENT (A) 175 t, RECOVERY TIMES (ns) 50 TC = 25oC, dIEC/dt = 200A/s 40 150 125 100 75 50 25 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VEC , FORWARD VOLTAGE (V) 100oC -55oC 25oC trr 30 ta 20 tb 10 0 1 2 5 10 20 30 IEC , FORWARD CURRENT (A) FIGURE 17. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 18. RECOVERY TIME vs FORWARD CURRENT (c)2004 Fairchild Semiconductor Corporation HGTG30N60B3D Rev. B2 HGTG30N60B3D Test Circuit and Waveforms HGTG30N60B3D 90% VGE L = 1mH VCE RG = 3 + VDD = 480V ICE 90% 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 20. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM . Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 20. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC . The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 20. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). (c)2004 Fairchild Semiconductor Corporation HGTG30N60B3D Rev. B2 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FPSTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM FACTTM i-LoTM Across the board. Around the world.TM The Power Franchise Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM PACMANTM POPTM ISOPLANARTM Power247TM LittleFETTM MICROCOUPLERTM PowerSaverTM PowerTrench MicroFETTM QFET MicroPakTM QSTM MICROWIRETM QT OptoelectronicsTM MSXTM Quiet SeriesTM MSXProTM RapidConfigureTM OCXTM RapidConnectTM OCXProTM SILENT SWITCHER OPTOLOGIC SMART STARTTM OPTOPLANARTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I10 |
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